IRF530NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

225

Number of Terminations :

2

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Additional Feature :

AVALANCHE RATED

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation-Max :

3.8W Ta 70W Tc

Terminal Finish :

Tin/Lead (Sn/Pb)

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain Current-Max (Abs) (ID) :

17A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2002

Qualification Status :

Not Qualified

Surface Mount :

yes

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.09Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

93 mJ

Terminal Position :

Single

JESD-609 Code :

e0

FET Type :

N-Channel

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

60A

HTS Code :

8541.29.00.95

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube