IRF530A

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

36 ns

REACH SVHC :

No SVHC

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE, NOT REC (Last Updated: 3 days ago)

Continuous Drain Current (ID) :

14A

Rds On (Max) @ Id, Vgs :

110m Ω @ 7A, 10V

ECCN Code :

EAR99

Mount :

Through Hole

Resistance :

110mOhm

Pbfree Code :

yes

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

56A

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

2V

Published :

1997

Number of Pins :

3

Rise Time :

14ns

Element Configuration :

Single

Power Dissipation-Max :

55W Tc

Packaging :

Tube

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

790pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Length :

10.1mm

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Gate to Source Voltage (Vgs) :

0V

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Power Dissipation :

55W

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Width :

4.7mm

Weight :

1.8g

Height :

9.4mm

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Turn On Delay Time :

13 ns

Number of Terminations :

3

Qualification Status :

Not Qualified

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Turn-Off Delay Time :

55 ns

Drain to Source Breakdown Voltage :

100V