IRF5305STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Avalanche Energy Rating (Eas) :

280 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

55V

Surface Mount :

yes

Pulsed Drain Current-Max (IDM) :

110A

Drain Current-Max (Abs) (ID) :

31A

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55V

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

FET Type :

P-Channel

Published :

2000

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Series :

HEXFET®

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.06Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

60m Ω @ 16A, 10V

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Terminal Form :

Gull wing

Power Dissipation-Max :

3.8W Ta 110W Tc