IRF5305STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

39 ns

Terminal Form :

Gull wing

Number of Terminations :

2

Number of Elements :

1

Nominal Vgs :

-4 V

Gate to Source Voltage (Vgs) :

20V

Published :

2005

Current Rating :

-31A

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

-55V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Rise Time :

66ns

Width :

9.65mm

Mount :

Surface Mount

Threshold Voltage :

-4V

Avalanche Energy Rating (Eas) :

280 mJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 16A, 10V

JESD-30 Code :

R-PSSO-G2

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

JEDEC-95 Code :

TO-252

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Channels :

1

Vgs (Max) :

±20V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Recovery Time :

110 ns

Time@Peak Reflow Temperature-Max (s) :

30

Power Dissipation :

110W

Drain to Source Voltage (Vdss) :

55V

Fall Time (Typ) :

63 ns

Element Configuration :

Single

Turn On Delay Time :

14 ns

Dual Supply Voltage :

-55V

Additional Feature :

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

Lead Free :

Contains Lead, Lead Free

Contact Plating :

Tin

Series :

HEXFET®

Transistor Element Material :

SILICON

Factory Lead Time :

12 Weeks

Max Junction Temperature (Tj) :

175°C

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

REACH SVHC :

No SVHC

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Height :

5.084mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

60mOhm

Case Connection :

DRAIN

Voltage - Rated DC :

-55V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

-31A

Length :

10.668mm

FET Type :

P-Channel

Power Dissipation-Max :

3.8W Ta 110W Tc