IRF5210STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Qualification Status :

Not Qualified

Mounting Type :

Surface Mount

Pulsed Drain Current-Max (IDM) :

140A

Packaging :

Tape and Reel (TR)

FET Type :

P-Channel

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Rds On (Max) @ Id, Vgs :

60m Ω @ 38A, 10V

JESD-30 Code :

R-PSSO-G2

Avalanche Energy Rating (Eas) :

120 mJ

Drain to Source Voltage (Vdss) :

100V

Drain-source On Resistance-Max :

0.06Ohm

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Transistor Application :

SWITCHING

Number of Elements :

1

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Terminations :

2

Terminal Form :

Gull wing

ECCN Code :

EAR99

Published :

2005

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain Current-Max (Abs) (ID) :

38A

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

3.1W Ta 170W Tc

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

10 Weeks

Case Connection :

DRAIN

DS Breakdown Voltage-Min :

100V