IRF5210STRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

Series :

HEXFET®

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

40A Tc

RoHS Status :

Non-RoHS Compliant

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Pulsed Drain Current-Max (IDM) :

140A

Terminal Form :

Gull wing

Published :

1998

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drain Current-Max (Abs) (ID) :

38A

Operating Temperature :

-55°C~175°C TJ

Rds On (Max) @ Id, Vgs :

60m Ω @ 24A, 10V

Avalanche Energy Rating (Eas) :

120 mJ

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

3.8W Ta 200W Tc

Terminal Position :

Single

Number of Terminations :

2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.06Ohm

Surface Mount :

yes

Time@Peak Reflow Temperature-Max (s) :

30

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

100V

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE