IRF5210STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Published :

1998

Max Junction Temperature (Tj) :

150°C

Threshold Voltage :

-4V

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Power Dissipation :

3.8W

Element Configuration :

Single

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Continuous Drain Current (ID) :

-40A

Number of Pins :

3

Vgs (Max) :

±20V

Termination :

SMD/SMT

Recovery Time :

260 ns

Contact Plating :

Tin

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-100V

Nominal Vgs :

-4 V

Dual Supply Voltage :

100V

Packaging :

Tape and Reel (TR)

Lead Free :

Contains Lead

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Factory Lead Time :

12 Weeks

Current Rating :

-40A

Power Dissipation-Max :

3.1W Ta 170W Tc

Number of Channels :

1

Number of Terminations :

2

Turn-Off Delay Time :

72 ns

Height :

4.83mm

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Mounting Type :

Surface Mount

Series :

HEXFET®

Rise Time :

63ns

Resistance :

60mOhm

Mount :

Surface Mount

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

14 ns

Operating Temperature :

-55°C~150°C TJ

FET Type :

P-Channel

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Fall Time (Typ) :

55 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Breakdown Voltage :

-100V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

60m Ω @ 38A, 10V

Length :

10.668mm