IRF5210LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Rise Time :

63ns

Rds On (Max) @ Id, Vgs :

60m Ω @ 38A, 10V

Turn-Off Delay Time :

72 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

38A Tc

Continuous Drain Current (ID) :

-40A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

55 ns

Packaging :

Tube

Radiation Hardening :

No

Width :

4.69mm

Gate to Source Voltage (Vgs) :

20V

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Lead Free :

Contains Lead

Factory Lead Time :

12 Weeks

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Mounting Type :

Through Hole

JESD-609 Code :

e3

Current Rating :

-40A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Gate Charge (Qg) (Max) @ Vgs :

230nC @ 10V

Case Connection :

DRAIN

Voltage - Rated DC :

-100V

Published :

1998

Element Configuration :

Single

Mount :

Through Hole

Power Dissipation-Max :

3.1W Ta 170W Tc

Length :

10.54mm

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

2780pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

100V

Resistance :

60mOhm

Turn On Delay Time :

14 ns

Series :

HEXFET®

Number of Terminations :

3

Power Dissipation :

200W

Drain to Source Breakdown Voltage :

-100V

Time@Peak Reflow Temperature-Max (s) :

30

Threshold Voltage :

4V

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Height :

9.652mm

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel