IRF5210L

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Single

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Published :

1998

Drain-source On Resistance-Max :

0.06Ohm

JESD-609 Code :

e0

Transistor Element Material :

SILICON

Surface Mount :

No

Power Dissipation-Max :

3.8W Ta 200W Tc

JESD-30 Code :

R-PSIP-T3

Terminal Finish :

Tin/Lead (Sn/Pb)

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Voltage (Vdss) :

100V

HTS Code :

8541.29.00.95

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

38A

Vgs (Max) :

±20V

FET Type :

P-Channel

Peak Reflow Temperature (Cel) :

225

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

120 mJ

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

Additional Feature :

HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

140A

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

40A Tc

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

60m Ω @ 24A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 25V

Number of Terminations :

3