IRF520STRL
- Mfr.Part #
- IRF520STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.2A D2PAK
- Stock
- 6,303
- In Stock :
- 6,303
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- ECCN Code :
- EAR99
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2017
- Operating Mode :
- ENHANCEMENT MODE
- HTS Code :
- 8541.29.00.95
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 9.2A Tc
- JESD-609 Code :
- e0
- Avalanche Energy Rating (Eas) :
- 200 mJ
- Drain-source On Resistance-Max :
- 0.27Ohm
- Mount :
- Surface Mount
- Continuous Drain Current (ID) :
- 9.2A
- Case Connection :
- DRAIN
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Power Dissipation-Max :
- 3.7W Ta 60W Tc
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds :
- 360pF @ 25V
- Vgs (Max) :
- ±20V
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- Unknown
- Rds On (Max) @ Id, Vgs :
- 270m Ω @ 5.5A, 10V
- FET Type :
- N-Channel
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 37A
- Terminal Finish :
- TIN LEAD
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- IRF520STRL
N-Channel Tape & Reel (TR) 270m Ω @ 5.5A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF520STRL Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 200 mJ.The maximum input capacitance of this device is 360pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9.2A.There is no pulsed drain current maximum for this device based on its rated peak drain current 37A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 100V.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF520STRL Features
the avalanche energy rating (Eas) is 200 mJ
a continuous drain current (ID) of 9.2A
based on its rated peak drain current 37A.
a 100V drain to source voltage (Vdss)
IRF520STRL Applications
There are a lot of Vishay Siliconix
IRF520STRL applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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