IRF520PBF

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Mfr.Part #
IRF520PBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 9.2A TO220AB
Stock
119,583
In Stock :
119,583

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation :
60W
Element Configuration :
Single
Resistance :
270mOhm
Supplier Device Package :
TO-220AB
Number of Elements :
1
Max Operating Temperature :
175°C
Fall Time (Typ) :
20 ns
REACH SVHC :
Unknown
Input Capacitance :
360pF
Drain to Source Resistance :
270mOhm
Power Dissipation-Max :
60W Tc
Voltage - Rated DC :
100V
Factory Lead Time :
8 Weeks
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
19 ns
Rise Time :
30ns
Min Operating Temperature :
-55°C
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Threshold Voltage :
4V
RoHS Status :
ROHS3 Compliant
Rds On (Max) @ Id, Vgs :
270mOhm @ 5.5A, 10V
Vgs (Max) :
±20V
Current - Continuous Drain (Id) @ 25°C :
9.2A Tc
Weight :
6.000006g
Recovery Time :
260 ns
Radiation Hardening :
No
Continuous Drain Current (ID) :
9.2A
Width :
4.7mm
Input Capacitance (Ciss) (Max) @ Vds :
360pF @ 25V
Contact Plating :
Tin
Nominal Vgs :
10 V
Mount :
Through Hole
Mounting Type :
Through Hole
Height :
9.01mm
Published :
1997
Packaging :
Tube
Lead Free :
Lead Free
Drain to Source Voltage (Vdss) :
100V
Package / Case :
TO-220-3
Rds On Max :
270 mΩ
Number of Pins :
3
Gate Charge (Qg) (Max) @ Vgs :
16nC @ 10V
FET Type :
N-Channel
Length :
10.41mm
Number of Channels :
1
Gate to Source Voltage (Vgs) :
20V
Turn On Delay Time :
8.8 ns
Current Rating :
9.2A
Datasheets
IRF520PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF520PBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, Package / Case:TO-220-3, Number of Pins:3, Number of Channels:1, IRF520PBF pinout, IRF520PBF datasheet PDF, IRF520PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF520PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF520PBF


N-Channel Tube 270mOhm @ 5.5A, 10V ±20V 360pF @ 25V 16nC @ 10V 100V TO-220-3

IRF520PBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 360pF @ 25V.This device conducts a continuous drain current (ID) of 9.2A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 19 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 270mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 8.8 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF520PBF Features


a continuous drain current (ID) of 9.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRF520PBF Applications


There are a lot of Vishay Siliconix
IRF520PBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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