IRF520NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.8W

Fall Time (Typ) :

23 ns

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

FET Type :

N-Channel

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mount :

Surface Mount

Turn On Delay Time :

4.5 ns

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

Unknown

Height :

4.826mm

Width :

9.65mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Voltage - Rated DC :

100V

Factory Lead Time :

12 Weeks

Mounting Type :

Surface Mount

Current Rating :

9.7A

Power Dissipation-Max :

3.8W Ta 48W Tc

Radiation Hardening :

No

Length :

10.668mm

Number of Elements :

1

Element Configuration :

Single

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Contains Lead

Drain to Source Breakdown Voltage :

100V

Number of Terminations :

2

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Drain-source On Resistance-Max :

0.2Ohm

Turn-Off Delay Time :

32 ns

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Continuous Drain Current (ID) :

9.7A

Rise Time :

23ns

Published :

1995

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2