IRF520NSPBF
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- Mfr.Part #
- IRF520NSPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 9.7A D2PAK
- Stock
- 3,421
- In Stock ：
- 3,421
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Height :
- 4.826mm
- Published :
- 2004
- Power Dissipation-Max :
- 3.8W Ta 48W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 32 ns
- Radiation Hardening :
- No
- Series :
- HEXFET®
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 23 ns
- Nominal Vgs :
- 4 V
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 23ns
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 4.5 ns
- Case Connection :
- DRAIN
- Continuous Drain Current (ID) :
- 9.7A
- Input Capacitance (Ciss) (Max) @ Vds :
- 330pF @ 25V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width :
- 10.16mm
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 200m Ω @ 5.7A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 9.7A Tc
- Voltage - Rated DC :
- 100V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- REACH SVHC :
- No SVHC
- Min Operating Temperature :
- -55°C
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Transistor Application :
- SWITCHING
- JESD-30 Code :
- R-PSSO-G2
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Length :
- 10.668mm
- Power Dissipation :
- 48W
- FET Type :
- N-Channel
- Threshold Voltage :
- 4V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Contact Plating :
- Tin
- Drain to Source Breakdown Voltage :
- 100V
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 2
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Recovery Time :
- 150 ns
- Max Operating Temperature :
- 175°C
- Resistance :
- 200mOhm
- Current Rating :
- 9.7A
- Packaging :
- Tube
- Datasheets
- IRF520NSPBF
N-Channel Tube 200m Ω @ 5.7A, 10V ±20V 330pF @ 25V 25nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF520NSPBF Overview
A device's maximum input capacitance is 330pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=100V, and this device has a drain-to-source breakdown voltage of 100V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 32 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 4.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of 4V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IRF520NSPBF Features
a continuous drain current (ID) of 9.7A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 32 ns
a threshold voltage of 4V
IRF520NSPBF Applications
There are a lot of Infineon Technologies
IRF520NSPBF applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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