IRF520NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

225

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Transistor Element Material :

SILICON

JESD-609 Code :

e0

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

9.7A

Published :

1995

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

200m Ω @ 5.7A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

330pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

9.7A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

ECCN Code :

EAR99

HTS Code :

8541.29.00.75

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

38A

Case Connection :

DRAIN

Number of Terminations :

2

Drain-source On Resistance-Max :

0.2Ohm

RoHS Status :

Non-RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

100V

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

3.8W Ta 48W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Number of Elements :

1

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

91 mJ

Terminal Position :

Single