IRF520

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

270m Ω @ 7A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

460pF @ 25V

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V

Base Part Number :

IRF5

Series :

STripFET™ II

Drain Current-Max (Abs) (ID) :

10A

Power Dissipation-Max :

60W Tc

Packaging :

Tube

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

Number of Elements :

1

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

No

Drain-source On Resistance-Max :

0.27Ohm

Mounting Type :

Through Hole

ECCN Code :

EAR99

Turn On Time-Max (ton) :

115ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

Non-RoHS Compliant

Feedback Cap-Max (Crss) :

100 pF

JESD-30 Code :

R-PSFM-T3

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

100V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn Off Time-Max (toff) :

50ns

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pulsed Drain Current-Max (IDM) :

40A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

FAST SWITCHING

Avalanche Energy Rating (Eas) :

100 mJ

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE