IPU80R750P7AKMA1
- Mfr.Part #
- IPU80R750P7AKMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 7A TO251-3
- Stock
- 400
- In Stock :
- 400
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Reach Compliance Code :
- not_compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 800V
- Transistor Element Material :
- SILICON
- Vgs (Max) :
- ±20V
- Drain-source On Resistance-Max :
- 0.75Ohm
- Terminal Position :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- DS Breakdown Voltage-Min :
- 800V
- Number of Terminations :
- 3
- Series :
- CoolMOS™ P7
- JESD-30 Code :
- R-PSIP-T3
- ECCN Code :
- EAR99
- Current - Continuous Drain (Id) @ 25°C :
- 7A Tc
- Transistor Application :
- SWITCHING
- Power Dissipation-Max :
- 51W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 460pF @ 500V
- Published :
- 2014
- Factory Lead Time :
- 18 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Terminal Finish :
- Tin (Sn)
- Vgs(th) (Max) @ Id :
- 3.5V @ 140μA
- Surface Mount :
- No
- FET Type :
- N-Channel
- JESD-609 Code :
- e3
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Mounting Type :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 17A
- Rds On (Max) @ Id, Vgs :
- 750m Ω @ 2.7A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- Avalanche Energy Rating (Eas) :
- 16 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IPU80R750P7AKMA1

N-Channel Tube 750m Ω @ 2.7A, 10V ±20V 460pF @ 500V 17nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA
IPU80R750P7AKMA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 16 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 460pF @ 500V.A maximum pulsed drain current of 17A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPU80R750P7AKMA1 Features
the avalanche energy rating (Eas) is 16 mJ
based on its rated peak drain current 17A.
a 800V drain to source voltage (Vdss)
IPU80R750P7AKMA1 Applications
There are a lot of Infineon Technologies
IPU80R750P7AKMA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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