IPU80R750P7AKMA1

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Mfr.Part #
IPU80R750P7AKMA1
Manufacturer
Infineon Technologies
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 800V 7A TO251-3
Stock
400
In Stock :
400

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Case Connection :
DRAIN
Reach Compliance Code :
not_compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Drain to Source Voltage (Vdss) :
800V
Transistor Element Material :
SILICON
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.75Ohm
Terminal Position :
Single
Operating Temperature :
-55°C~150°C TJ
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
DS Breakdown Voltage-Min :
800V
Number of Terminations :
3
Series :
CoolMOS™ P7
JESD-30 Code :
R-PSIP-T3
ECCN Code :
EAR99
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Transistor Application :
SWITCHING
Power Dissipation-Max :
51W Tc
Input Capacitance (Ciss) (Max) @ Vds :
460pF @ 500V
Published :
2014
Factory Lead Time :
18 Weeks
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Packaging :
Tube
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
3.5V @ 140μA
Surface Mount :
No
FET Type :
N-Channel
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Mounting Type :
Through Hole
Pulsed Drain Current-Max (IDM) :
17A
Rds On (Max) @ Id, Vgs :
750m Ω @ 2.7A, 10V
Operating Mode :
ENHANCEMENT MODE
Avalanche Energy Rating (Eas) :
16 mJ
Configuration :
SINGLE WITH BUILT-IN DIODE
Number of Elements :
1
RoHS Status :
ROHS3 Compliant
Datasheets
IPU80R750P7AKMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPU80R750P7AKMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, IPU80R750P7AKMA1 pinout, IPU80R750P7AKMA1 datasheet PDF, IPU80R750P7AKMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPU80R750P7AKMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPU80R750P7AKMA1


N-Channel Tube 750m Ω @ 2.7A, 10V ±20V 460pF @ 500V 17nC @ 10V 800V TO-251-3 Short Leads, IPak, TO-251AA

IPU80R750P7AKMA1 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 16 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 460pF @ 500V.A maximum pulsed drain current of 17A is the maximum peak drain current rated for this device.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 800V.In order to operate this transistor, a voltage of 800V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IPU80R750P7AKMA1 Features


the avalanche energy rating (Eas) is 16 mJ
based on its rated peak drain current 17A.
a 800V drain to source voltage (Vdss)


IPU80R750P7AKMA1 Applications


There are a lot of Infineon Technologies
IPU80R750P7AKMA1 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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