IPU80R2K8CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

RoHS Status :

RoHS Compliant

Power Dissipation-Max :

42W Tc

Published :

2008

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

Single

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

JESD-609 Code :

e3

FET Type :

N-Channel

Surface Mount :

No

Series :

CoolMOS™

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Packaging :

Tube

Pulsed Drain Current-Max (IDM) :

6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

90 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 1.1A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Factory Lead Time :

16 Weeks

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Continuous Drain Current (ID) :

1.9A

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc