IPU80R1K0CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.9V @ 250μA

Published :

2008

Number of Elements :

1

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.95Ohm

Terminal Position :

Single

Drain Current-Max (Abs) (ID) :

5.7A

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

JESD-609 Code :

e3

Packaging :

Tube

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.6A, 10V

Reach Compliance Code :

not_compliant

Series :

CoolMOS™ CE

Terminal Finish :

Tin (Sn)

Pulsed Drain Current-Max (IDM) :

18A

Number of Terminations :

3

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Power Dissipation-Max :

83W Tc

DS Breakdown Voltage-Min :

800V

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Number of Pins :

3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

800V