IPU80R2K4P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

22W Tc

ECCN Code :

EAR99

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.5A Tc

Surface Mount :

No

Pulsed Drain Current-Max (IDM) :

5.3A

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 500V

JESD-30 Code :

R-PSIP-T3

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

3.5V @ 40μA

JESD-609 Code :

e3

Reach Compliance Code :

not_compliant

DS Breakdown Voltage-Min :

800V

Operating Mode :

ENHANCEMENT MODE

Published :

2014

Packaging :

Tube

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Transistor Application :

SWITCHING

Series :

CoolMOS™ P7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 800mA, 10V

Factory Lead Time :

18 Weeks

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Avalanche Energy Rating (Eas) :

4 mJ

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±20V