IPU80R600P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Avalanche Energy Rating (Eas) :

20 mJ

Drain to Source Voltage (Vdss) :

800V

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.4A, 10V

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Power Dissipation-Max :

60W Tc

Pulsed Drain Current-Max (IDM) :

22A

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

8A Tc

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 500V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

800V

Surface Mount :

No

Published :

2014

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Factory Lead Time :

18 Weeks

Series :

CoolMOS™ P7

Number of Terminations :

3

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.6Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)