IPU80R3K3P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

18W Tc

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 500V

Pulsed Drain Current-Max (IDM) :

3.8A

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Operating Temperature :

-55°C~150°C TJ

Published :

2014

Packaging :

Tube

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Number of Terminations :

3

DS Breakdown Voltage-Min :

800V

Case Connection :

DRAIN

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Transistor Element Material :

SILICON

Series :

CoolMOS™ P7

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

2 mJ

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 590mA, 10V

Drain to Source Voltage (Vdss) :

800V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

JESD-30 Code :

R-PSIP-T3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

FET Type :

N-Channel