IPU80R1K4CEAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

800V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

12A

Drain to Source Voltage (Vdss) :

800V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

JESD-30 Code :

R-PSIP-T3

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.3A, 10V

Number of Elements :

1

Continuous Drain Current (ID) :

3.9A

Mounting Type :

Through Hole

Series :

CoolMOS™

Avalanche Energy Rating (Eas) :

170 mJ

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Published :

2008

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

63W Tc

Pbfree Code :

yes

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

RoHS Status :

RoHS Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Surface Mount

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Factory Lead Time :

6 Weeks

Transistor Element Material :

SILICON

Terminal Position :

Single

FET Type :

N-Channel

Vgs (Max) :

±20V