IPU80R2K8CEBKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Published :

2008

Drain to Source Voltage (Vdss) :

800V

FET Type :

N-Channel

Supplier Device Package :

PG-TO251-3

Input Capacitance :

290pF

Continuous Drain Current (ID) :

1.9A

Drain to Source Resistance :

2.8Ohm

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Min Operating Temperature :

-55°C

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Operating Temperature :

-55°C~150°C TJ

Width :

2.41mm

Max Dual Supply Voltage :

800V

Rise Time :

15ns

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Vgs (Max) :

±20V

Fall Time (Typ) :

18 ns

Gate to Source Voltage (Vgs) :

30V

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Series :

CoolMOS™

Number of Channels :

1

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Max Operating Temperature :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Weight :

343.085929mg

Height :

6.22mm

Rds On (Max) @ Id, Vgs :

2.8Ohm @ 1.1A, 10V

Packaging :

Tube

Turn On Delay Time :

25 ns

Turn-Off Delay Time :

72 ns

Length :

6.73mm

Rds On Max :

2.8 Ω

Power Dissipation-Max :

42W Tc

Halogen Free :

Not Halogen Free

Lead Free :

Contains Lead