IPU80R1K2P7AKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Power Dissipation-Max :

37W Tc

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 500V

Pulsed Drain Current-Max (IDM) :

11A

Vgs (Max) :

±20V

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSIP-T3

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 1.7A, 10V

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

10 mJ

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

Single

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 80μA

DS Breakdown Voltage-Min :

800V

Packaging :

Tube

Series :

CoolMOS™ P7

Surface Mount :

No

FET Type :

N-Channel

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Case Connection :

DRAIN

Mounting Type :

Through Hole

Current - Continuous Drain (Id) @ 25°C :

4.5A Tc

Factory Lead Time :

18 Weeks