IPI120P04P404AKSA1
- Mfr.Part #
- IPI120P04P404AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 120A TO262-3
- Stock
- 44,212
- In Stock :
- 44,212
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Avalanche Energy Rating (Eas) :
- 78 mJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Case Connection :
- DRAIN
- Fall Time (Typ) :
- 52 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- P-Channel
- JESD-609 Code :
- e3
- Lead Free :
- Contains Lead
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Rise Time :
- 20ns
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Turn-Off Delay Time :
- 49 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 120A
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 30 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 205nC @ 10V
- Mounting Type :
- Through Hole
- Published :
- 2013
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Halogen Free :
- Halogen Free
- Terminal Position :
- Single
- Power Dissipation-Max :
- 136W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 340μA
- Max Dual Supply Voltage :
- -40V
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 480A
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 14790pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 100A, 10V
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 40V
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Factory Lead Time :
- 14 Weeks
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Datasheets
- IPI120P04P404AKSA1

P-Channel Tube 3.8m Ω @ 100A, 10V ±20V 14790pF @ 25V 205nC @ 10V 40V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI120P04P404AKSA1 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 78 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 14790pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 49 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 480A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 30 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The maximum dual supply voltage can be supported by -40V.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IPI120P04P404AKSA1 Features
the avalanche energy rating (Eas) is 78 mJ
a continuous drain current (ID) of 120A
the turn-off delay time is 49 ns
based on its rated peak drain current 480A.
a 40V drain to source voltage (Vdss)
IPI120P04P404AKSA1 Applications
There are a lot of Infineon Technologies
IPI120P04P404AKSA1 applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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