IPI100N10S305AKSA1
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- Mfr.Part #
- IPI100N10S305AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 100A TO262-3
- Stock
- 1,000
- In Stock ：
- 1,000
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Published :
- 2008
- Input Capacitance (Ciss) (Max) @ Vds :
- 11570pF @ 25V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Vgs(th) (Max) @ Id :
- 4V @ 240µA
- JESD-30 Code :
- R-PSIP-T3
- Rds On (Max) @ Id, Vgs :
- 5.1m Ω @ 100A, 10V
- Number of Elements :
- 1
- Halogen Free :
- Halogen Free
- Gate Charge (Qg) (Max) @ Vgs :
- 176nC @ 10V
- Terminal Position :
- Single
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Gate to Source Voltage (Vgs) :
- 20V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Lead Free :
- Contains Lead
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 60 ns
- Vgs (Max) :
- ±20V
- Turn On Delay Time :
- 34 ns
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Reach Compliance Code :
- not_compliant
- Number of Terminations :
- 3
- Rise Time :
- 17ns
- Power Dissipation-Max :
- 300W Tc
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Mount :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Fall Time (Typ) :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 400A
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Series :
- OptiMOS™
- Max Dual Supply Voltage :
- 100V
- Power Dissipation :
- 300W
- Continuous Drain Current (ID) :
- 100A
- Datasheets
- IPI100N10S305AKSA1
N-Channel Tube 5.1m Ω @ 100A, 10V ±20V 11570pF @ 25V 176nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI100N10S305AKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 11570pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 100A amps.It is [60 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 400A.A turn-on delay time of 34 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 100V, it can support the maximum dual supply voltage.A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPI100N10S305AKSA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 60 ns
based on its rated peak drain current 400A.
IPI100N10S305AKSA1 Applications
There are a lot of Infineon Technologies
IPI100N10S305AKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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