IPI100P03P3L-04
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- Mfr.Part #
- IPI100P03P3L-04
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 100A TO262-3
- Stock
- 48,126
- In Stock ：
- 48,126
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Published :
- 2007
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- Series :
- OptiMOS™
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 180 ns
- Rds On (Max) @ Id, Vgs :
- 4.3m Ω @ 80A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 5V
- Vgs (Max) :
- +5V, -16V
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 30V
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- FET Type :
- P-Channel
- Rise Time :
- 45ns
- Drain to Source Breakdown Voltage :
- -30V
- Power Dissipation-Max :
- 200W Tc
- Pin Count :
- 3
- Vgs(th) (Max) @ Id :
- 2.1V @ 475µA
- Input Capacitance (Ciss) (Max) @ Vds :
- 9300pF @ 25V
- Continuous Drain Current (ID) :
- 100A
- Resistance :
- 4mOhm
- Power Dissipation :
- 200W
- Turn-Off Delay Time :
- 200 ns
- RoHS Status :
- RoHS Compliant
- Datasheets
- IPI100P03P3L-04
P-Channel Tube 4.3m Ω @ 80A, 10V +5V, -16V 9300pF @ 25V 200nC @ 10V 30V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI100P03P3L-04 Overview
A device's maximal input capacitance is 9300pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 200 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 5V volts.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IPI100P03P3L-04 Features
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 200 ns
a 30V drain to source voltage (Vdss)
IPI100P03P3L-04 Applications
There are a lot of Infineon Technologies
IPI100P03P3L-04 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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