IPI100N06S3-04
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- Mfr.Part #
- IPI100N06S3-04
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 100A TO262-3
- Stock
- 42,948
- In Stock ：
- 42,948
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 214W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 14230pF @ 25V
- Fall Time (Typ) :
- 62 ns
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Rds On (Max) @ Id, Vgs :
- 4.4m Ω @ 80A, 10V
- Peak Reflow Temperature (Cel) :
- 260
- Rise Time :
- 62ns
- Avalanche Energy Rating (Eas) :
- 450 mJ
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 100A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Current Rating :
- 100A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2007
- Operating Temperature :
- -55°C~175°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e3
- Power Dissipation :
- 214W
- Turn-Off Delay Time :
- 62 ns
- Terminal Finish :
- MATTE TIN
- Pulsed Drain Current-Max (IDM) :
- 400A
- Drain-source On Resistance-Max :
- 0.0044Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 314nC @ 10V
- Drain to Source Breakdown Voltage :
- 55V
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Number of Terminations :
- 3
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Vgs(th) (Max) @ Id :
- 4V @ 150μA
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- OptiMOS™
- Mount :
- Through Hole
- Voltage - Rated DC :
- 55V
- Datasheets
- IPI100N06S3-04
N-Channel Tube 4.4m Ω @ 80A, 10V ±20V 14230pF @ 25V 314nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI100N06S3-04 Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 450 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 14230pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 100A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=55V. And this device has 55V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 62 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 400A.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.
IPI100N06S3-04 Features
the avalanche energy rating (Eas) is 450 mJ
a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 55V voltage
the turn-off delay time is 62 ns
based on its rated peak drain current 400A.
IPI100N06S3-04 Applications
There are a lot of Infineon Technologies
IPI100N06S3-04 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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