IPI100N04S3-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2007

Input Capacitance (Ciss) (Max) @ Vds :

9600pF @ 25V

Drain-source On Resistance-Max :

0.0028Ohm

Vgs (Max) :

±20V

HTS Code :

8541.29.00.95

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

145nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

214W Tc

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

DS Breakdown Voltage-Min :

40V

Rds On (Max) @ Id, Vgs :

2.8m Ω @ 80A, 10V

Transistor Element Material :

SILICON

Packaging :

Tube

Mounting Type :

Through Hole

Pulsed Drain Current-Max (IDM) :

400A

JESD-30 Code :

R-PSIP-T3

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

100A

Vgs(th) (Max) @ Id :

4V @ 150μA

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

40V

Avalanche Energy Rating (Eas) :

898 mJ

RoHS Status :

RoHS Compliant

Series :

OptiMOS™

Surface Mount :

No

Reach Compliance Code :

Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

ULTRA LOW RESISTANCE

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED