IPI110N20N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Number of Elements :

1

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

88A

Rds On (Max) @ Id, Vgs :

11m Ω @ 88A, 10V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

FET Type :

N-Channel

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Power Dissipation :

300W

Terminal Position :

Single

Turn-Off Delay Time :

41 ns

Pbfree Code :

No

Mount :

Through Hole

Pulsed Drain Current-Max (IDM) :

352A

Input Capacitance (Ciss) (Max) @ Vds :

7100pF @ 100V

Number of Terminations :

3

Pin Count :

3

Fall Time (Typ) :

11 ns

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Finish :

Tin (Sn)

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Max Dual Supply Voltage :

200V

Avalanche Energy Rating (Eas) :

560 mJ

Gate Charge (Qg) (Max) @ Vgs :

87nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 270μA

JESD-30 Code :

R-PSIP-T3

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Rise Time :

26ns

Turn On Delay Time :

18 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

88A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2008

Transistor Application :

SWITCHING

Reach Compliance Code :

not_compliant

Lead Free :

Contains Lead

Halogen Free :

Halogen Free

Power Dissipation-Max :

300W Tc