IPI111N15N3GAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

11.1m Ω @ 83A, 10V

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

214W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3230pF @ 75V

Max Dual Supply Voltage :

150V

Number of Elements :

1

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

83A Tc

ECCN Code :

EAR99

Fall Time (Typ) :

9 ns

Factory Lead Time :

18 Weeks

JESD-609 Code :

e3

Turn On Delay Time :

17 ns

Halogen Free :

Halogen Free

FET Type :

N-Channel

Pin Count :

3

Terminal Finish :

Tin (Sn)

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Mounting Type :

Through Hole

Transistor Element Material :

SILICON

Width :

4.52mm

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

8V 10V

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Series :

OptiMOS™

Lead Free :

Contains Lead

Power Dissipation :

214W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 160μA

Turn-Off Delay Time :

32 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Rise Time :

35ns

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Temperature :

-55°C~175°C TJ

Number of Pins :

3

Continuous Drain Current (ID) :

83A

Published :

2011

Length :

10.36mm

Packaging :

Tube

Height :

9.45mm

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

20V

Qualification Status :

Not Qualified