IPI100N06S3L-03

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

550nC @ 10V

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Rise Time :

70ns

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

16V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

55V

Mount :

Through Hole

Mounting Type :

Through Hole

Additional Feature :

LOGIC LEVEL COMPATIBLE

Drain to Source Breakdown Voltage :

55V

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSIP-T3

Fall Time (Typ) :

77 ns

Rds On (Max) @ Id, Vgs :

3m Ω @ 80A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Published :

2007

Current Rating :

100A

Power Dissipation-Max :

300W Tc

Number of Elements :

1

Turn-Off Delay Time :

110 ns

Pulsed Drain Current-Max (IDM) :

400A

Time@Peak Reflow Temperature-Max (s) :

40

Continuous Drain Current (ID) :

100A

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

690 mJ

Pin Count :

3

Series :

OptiMOS™

Power Dissipation :

300W

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

2.2V @ 230μA

Input Capacitance (Ciss) (Max) @ Vds :

26240pF @ 25V

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

JESD-609 Code :

e3

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Packaging :

Tube

Drain-source On Resistance-Max :

0.0046Ohm