IPI100N08S207AKSA1
- Mfr.Part #
- IPI100N08S207AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 75V 100A TO262-3
- Stock
- 38,287
- In Stock :
- 38,287
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Max Dual Supply Voltage :
- 75V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn-Off Delay Time :
- 61 ns
- Factory Lead Time :
- 14 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Continuous Drain Current (ID) :
- 100A
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Published :
- 2006
- Halogen Free :
- Halogen Free
- Pulsed Drain Current-Max (IDM) :
- 400A
- Mount :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 200nC @ 10V
- FET Type :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Packaging :
- Tube
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSIP-T3
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Turn On Delay Time :
- 26 ns
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Series :
- OptiMOS™
- Power Dissipation :
- 300W
- Vgs (Max) :
- ±20V
- JEDEC-95 Code :
- TO-262AB
- Operating Temperature :
- -55°C~175°C TJ
- Terminal Position :
- Single
- Rise Time :
- 51ns
- Fall Time (Typ) :
- 30 ns
- Mounting Type :
- Through Hole
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Contains Lead
- Rds On (Max) @ Id, Vgs :
- 7.1m Ω @ 80A, 10V
- Power Dissipation-Max :
- 300W Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 4700pF @ 25V
- Datasheets
- IPI100N08S207AKSA1

N-Channel Tube 7.1m Ω @ 80A, 10V ±20V 4700pF @ 25V 200nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IPI100N08S207AKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4700pF @ 25V.This device conducts a continuous drain current (ID) of 100A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 61 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 400A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 26 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 75V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPI100N08S207AKSA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 61 ns
based on its rated peak drain current 400A.
IPI100N08S207AKSA1 Applications
There are a lot of Infineon Technologies
IPI100N08S207AKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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