IPD85P04P407ATMA1

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Mfr.Part #
IPD85P04P407ATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 40V 85A TO252-3
Stock
27,362
In Stock :
27,362

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Elements :
1
Max Dual Supply Voltage :
-40V
Transistor Element Material :
SILICON
RoHS Status :
ROHS3 Compliant
FET Type :
P-Channel
Terminal Finish :
Tin (Sn)
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature :
-55°C~175°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Fall Time (Typ) :
39 ns
Lead Free :
Contains Lead
Case Connection :
DRAIN
JESD-609 Code :
e3
Drain to Source Voltage (Vdss) :
40V
Series :
Automotive, AEC-Q101, OptiMOS™
Rise Time :
15ns
Drain-source On Resistance-Max :
0.0073Ohm
Reach Compliance Code :
not_compliant
Operating Mode :
ENHANCEMENT MODE
Halogen Free :
Halogen Free
Terminal Position :
Single
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mounting Type :
Surface Mount
JESD-30 Code :
R-PSSO-G2
Configuration :
SINGLE WITH BUILT-IN DIODE
Factory Lead Time :
26 Weeks
Packaging :
Tape and Reel (TR)
Gate Charge (Qg) (Max) @ Vgs :
89nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs(th) (Max) @ Id :
4V @ 150μA
Power Dissipation-Max :
88W Tc
Rds On (Max) @ Id, Vgs :
7.3m Ω @ 85A, 10V
Vgs (Max) :
±20V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Terminal Form :
Gull wing
Turn-Off Delay Time :
34 ns
Continuous Drain Current (ID) :
85A
Published :
2009
Avalanche Energy Rating (Eas) :
30 mJ
Input Capacitance (Ciss) (Max) @ Vds :
6085pF @ 25V
Number of Terminations :
2
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
85A Tc
ECCN Code :
EAR99
Turn On Delay Time :
24 ns
Gate to Source Voltage (Vgs) :
20V
Pulsed Drain Current-Max (IDM) :
340A
Power Dissipation :
88W
Datasheets
IPD85P04P407ATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPD85P04P407ATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~175°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, IPD85P04P407ATMA1 pinout, IPD85P04P407ATMA1 datasheet PDF, IPD85P04P407ATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPD85P04P407ATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPD85P04P407ATMA1


P-Channel Tape & Reel (TR) 7.3m Ω @ 85A, 10V ±20V 6085pF @ 25V 89nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

IPD85P04P407ATMA1 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 30 mJ.The maximum input capacitance of this device is 6085pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 85A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 34 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 340A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 24 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its -40V power supply, it is capable of handling a dual voltage maximum.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IPD85P04P407ATMA1 Features


the avalanche energy rating (Eas) is 30 mJ
a continuous drain current (ID) of 85A
the turn-off delay time is 34 ns
based on its rated peak drain current 340A.
a 40V drain to source voltage (Vdss)


IPD85P04P407ATMA1 Applications


There are a lot of Infineon Technologies
IPD85P04P407ATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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