IPD80R1K4CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

25 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

800V

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

3.9A

Number of Channels :

1

Factory Lead Time :

18 Weeks

Max Operating Temperature :

150°C

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Published :

2013

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Input Capacitance :

570pF

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Rds On Max :

1.4 Ω

Max Dual Supply Voltage :

800V

Number of Pins :

3

Drain to Source Resistance :

1.4Ohm

Power Dissipation-Max :

63W Tc

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.4Ohm @ 2.3A, 10V

Element Configuration :

Single

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

3.949996g

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Number of Elements :

1

Fall Time (Typ) :

12 ns

Power Dissipation :

63W

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

72 ns

Vgs (Max) :

±20V

Supplier Device Package :

PG-TO252-3

Packaging :

Tape and Reel (TR)

Series :

CoolMOS™

Mount :

Surface Mount