IPD80N06S3-09

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

42ns

Reach Compliance Code :

Unknown

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

320A

FET Type :

N-Channel

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JEDEC-95 Code :

TO-252AA

Number of Terminations :

2

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 40A, 10V

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

6100pF @ 25V

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Fall Time (Typ) :

37 ns

Mount :

Surface Mount

Drain to Source Breakdown Voltage :

55V

Pin Count :

4

Packaging :

Tape and Reel (TR)

Element Configuration :

Single

ECCN Code :

EAR99

Power Dissipation-Max :

107W Tc

Vgs(th) (Max) @ Id :

4V @ 55μA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Additional Feature :

ULTRA LOW RESISTANCE

Terminal Form :

Gull wing

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

20V

Drain-source On Resistance-Max :

0.0084Ohm

Continuous Drain Current (ID) :

80A

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Published :

2004

RoHS Status :

RoHS Compliant

Avalanche Energy Rating (Eas) :

170 mJ

Power Dissipation :

107W

Gate Charge (Qg) (Max) @ Vgs :

88nC @ 10V

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Turn-Off Delay Time :

26 ns