IPD800N06NGBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

60V

Power Dissipation :

47W

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

43 mJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Turn-Off Delay Time :

22 ns

Pbfree Code :

No

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

80m Ω @ 16A, 10V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

16A Tc

Drain-source On Resistance-Max :

0.08Ohm

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 16μA

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Power Dissipation-Max :

47W Tc

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

16A

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 30V

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Pulsed Drain Current-Max (IDM) :

64A

Rise Time :

38ns

Gate to Source Voltage (Vgs) :

20V

JEDEC-95 Code :

TO-252AA

Additional Feature :

AVALANCHE RATED

FET Type :

N-Channel

Turn On Delay Time :

7 ns

Number of Terminations :

2

Pin Count :

4

Series :

OptiMOS™

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Fall Time (Typ) :

27 ns

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2006

Transistor Application :

SWITCHING