IPD80R280P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Gate Charge (Qg) (Max) @ Vgs :

36nC @ 10V

Avalanche Energy Rating (Eas) :

43 mJ

Pulsed Drain Current-Max (IDM) :

45A

Packaging :

Tape and Reel (TR)

FET Feature :

Super Junction

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

CoolMOS™

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Surface Mount :

yes

Case Connection :

DRAIN

Number of Terminations :

2

Mounting Type :

Surface Mount

Pbfree Code :

yes

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

800V

ECCN Code :

EAR99

Published :

2013

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 500V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

3.5V @ 360μA

Drain-source On Resistance-Max :

0.28Ohm

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Drain to Source Voltage (Vdss) :

800V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

280m Ω @ 7.2A, 10V

Transistor Application :

SWITCHING

Power Dissipation-Max :

101W Tc

Terminal Position :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V