IPD80R1K4CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3.9A

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Max Dual Supply Voltage :

800V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

72 ns

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Lead Free :

Lead Free

Fall Time (Typ) :

12 ns

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.3A, 10V

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Element Configuration :

Single

Rise Time :

15ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Number of Elements :

1

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

25 ns

Power Dissipation :

63W

Vgs (Max) :

±20V

Pbfree Code :

yes

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Published :

2008

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

63W Tc

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

JESD-609 Code :

e3

Weight :

3.949996g

Series :

CoolMOS™

FET Type :

N-Channel

Mounting Type :

Surface Mount