IPD80R1K4CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Fall Time (Typ) :

12 ns

Continuous Drain Current (ID) :

3.9A

Number of Pins :

3

Max Dual Supply Voltage :

800V

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Weight :

3.949996g

Rise Time :

15ns

JESD-30 Code :

R-PSSO-G2

JESD-609 Code :

e3

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 2.3A, 10V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

3.9V @ 240μA

Mount :

Surface Mount

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Power Dissipation-Max :

63W Tc

RoHS Status :

ROHS3 Compliant

Power Dissipation :

63W

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

3.9A Tc

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

25 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

not_compliant

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 100V

Transistor Application :

SWITCHING

Number of Terminations :

2

Published :

2008

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn-Off Delay Time :

72 ns

Lead Free :

Lead Free