IPD80R1K0CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Weight :

3.949996g

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

950m Ω @ 3.6A, 10V

Rise Time :

15ns

Drain-source On Resistance-Max :

0.95Ohm

Turn On Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

785pF @ 100V

Series :

CoolMOS™

Power Dissipation-Max :

83W Tc

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

5.7A Tc

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

2

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

83W

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Published :

2008

Turn-Off Delay Time :

72 ns

Number of Elements :

1

Fall Time (Typ) :

8 ns

Continuous Drain Current (ID) :

5.7A

Vgs(th) (Max) @ Id :

3.9V @ 250μA

FET Type :

N-Channel

Mount :

Surface Mount

Element Configuration :

Single

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Lead Free :

Lead Free

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Max Dual Supply Voltage :

800V

JESD-609 Code :

e3

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant