IPD80N04S3-06

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Power Dissipation-Max (Abs) :

88W

JEDEC-95 Code :

TO-252AA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Additional Feature :

ULTRA LOW RESISTANCE

Number of Elements :

1

Qualification Status :

Not Qualified

Operating Temperature (Max) :

175°C

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Pin Count :

4

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

40V

ECCN Code :

EAR99

Polarity/Channel Type :

N-Channel

Terminal Form :

Gull wing

HTS Code :

8541.29.00.95

Drain-source On Resistance-Max :

0.0052Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

125 mJ

Pbfree Code :

icon-pbfree yes

Pulsed Drain Current-Max (IDM) :

320A

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminals :

2

JESD-30 Code :

R-PSSO-G2

Drain Current-Max (Abs) (ID) :

80A