IPD80R2K0P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Current - Continuous Drain (Id) @ 25°C :

3A Tc

Surface Mount :

yes

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

2Ohm

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

800V

Series :

CoolMOS™ P7

Rds On (Max) @ Id, Vgs :

2 Ω @ 940mA, 10V

Number of Elements :

1

Vgs(th) (Max) @ Id :

3.5V @ 50μA

Published :

2014

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-252AA

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Terminal Position :

Single

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

6 mJ

Input Capacitance (Ciss) (Max) @ Vds :

175pF @ 500V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

Drain to Source Voltage (Vdss) :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

2

Power Dissipation-Max :

24W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

JESD-30 Code :

R-PSSO-G2