IPD80R900P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.9Ohm

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

Published :

2014

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Transistor Application :

SWITCHING

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

13 mJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Power Dissipation-Max :

45W Tc

Reach Compliance Code :

not_compliant

Terminal Finish :

Tin (Sn) - with Nickel (Ni) barrier

Case Connection :

DRAIN

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

14A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Vgs (Max) :

±20V

Number of Elements :

1

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

800V

ECCN Code :

EAR99

Series :

CoolMOS™ P7