IPD80R900P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Rds On (Max) @ Id, Vgs :

900m Ω @ 2.2A, 10V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Series :

CoolMOS™ P7

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Factory Lead Time :

18 Weeks

Current - Continuous Drain (Id) @ 25°C :

6A Tc

Number of Terminations :

2

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

800V

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

800V

Drain-source On Resistance-Max :

0.9Ohm

Surface Mount :

yes

Mounting Type :

Surface Mount

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn) - with Nickel (Ni) barrier

Vgs(th) (Max) @ Id :

3.5V @ 110μA

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

JEDEC-95 Code :

TO-252AA

Operating Mode :

ENHANCEMENT MODE

Reach Compliance Code :

not_compliant

Avalanche Energy Rating (Eas) :

13 mJ

JESD-30 Code :

R-PSSO-G2

Published :

2014

Pulsed Drain Current-Max (IDM) :

14A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

350pF @ 500V

Power Dissipation-Max :

45W Tc

Transistor Application :

SWITCHING

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63