IPD80R600P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

DS Breakdown Voltage-Min :

800V

Published :

2014

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.6Ohm

Current - Continuous Drain (Id) @ 25°C :

8A Tc

JESD-30 Code :

R-PSSO-G2

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

800V

Avalanche Energy Rating (Eas) :

20 mJ

Rds On (Max) @ Id, Vgs :

600m Ω @ 3.4A, 10V

Surface Mount :

yes

ECCN Code :

EAR99

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Vgs(th) (Max) @ Id :

3.5V @ 170μA

Transistor Element Material :

SILICON

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

570pF @ 500V

Number of Terminations :

2

JEDEC-95 Code :

TO-252AA

Pulsed Drain Current-Max (IDM) :

22A

Series :

CoolMOS™ P7

Case Connection :

DRAIN

Terminal Form :

Gull wing

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

60W Tc