IPD80R4K5P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

13W Tc

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

1 mJ

JEDEC-95 Code :

TO-252AA

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 400mA, 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

800V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Continuous Drain Current (ID) :

1.5A

Series :

CoolMOS™

FET Type :

N-Channel

Terminal Form :

Gull wing

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

800V

Reach Compliance Code :

not_compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

2.6A

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Factory Lead Time :

18 Weeks

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 500V

Published :

2013

Mount :

Surface Mount

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

3.5V @ 200µA

FET Feature :

Super Junction

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63