IPD80R4K5P7

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

800V

Published :

2013

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.5V @ 200µA

Series :

CoolMOS™

Current - Continuous Drain (Id) @ 25°C :

1.5A Tc

Terminal Position :

Single

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 500V

Power Dissipation-Max :

13W Tc

Case Connection :

DRAIN

Pbfree Code :

yes

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Mount :

Surface Mount

Reach Compliance Code :

not_compliant

Continuous Drain Current (ID) :

1.5A

FET Feature :

Super Junction

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

4.5 Ω @ 400mA, 10V

Operating Mode :

ENHANCEMENT MODE

Pulsed Drain Current-Max (IDM) :

2.6A

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-252AA

Drain to Source Voltage (Vdss) :

800V

Number of Elements :

1