IPD80R450P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

29 mJ

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Series :

CoolMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

800V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.45Ohm

Vgs(th) (Max) @ Id :

3.5V @ 220µA

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

73W Tc

Input Capacitance (Ciss) (Max) @ Vds :

770pF @ 500V

Mount :

Surface Mount

JEDEC-95 Code :

TO-252AA

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

11A

Gate Charge (Qg) (Max) @ Vgs :

24nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin (Sn)

Current - Continuous Drain (Id) @ 25°C :

11A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

Terminal Form :

Gull wing

Published :

2013

Number of Terminations :

2

Number of Elements :

1

Terminal Position :

Single

FET Feature :

Super Junction

DS Breakdown Voltage-Min :

800V

Reach Compliance Code :

not_compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

29A

Rds On (Max) @ Id, Vgs :

450m Ω @ 4.5A, 10V