IPD80R3K3P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

120pF @ 500V

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-252AA

Power Dissipation-Max :

18W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

3.5V @ 30μA

Factory Lead Time :

18 Weeks

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Number of Elements :

1

DS Breakdown Voltage-Min :

800V

Surface Mount :

yes

Vgs (Max) :

±20V

Series :

CoolMOS™ P7

Drain to Source Voltage (Vdss) :

800V

Gate Charge (Qg) (Max) @ Vgs :

5.8nC @ 10V

Avalanche Energy Rating (Eas) :

2 mJ

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Published :

2014

Number of Terminations :

2

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

3.8A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Rds On (Max) @ Id, Vgs :

3.3 Ω @ 590mA, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Element Material :

SILICON