IPD80R360P7ATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

930pF @ 500V

Factory Lead Time :

18 Weeks

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

34A

Drain-source On Resistance-Max :

0.36ohm

Vgs(th) (Max) @ Id :

3.5V @ 280μA

JESD-609 Code :

e3

Power Dissipation-Max :

84W Tc

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

2

Reach Compliance Code :

not_compliant

Series :

CoolMOS™ P7

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

800V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

800V

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

30nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Published :

2014

Rds On (Max) @ Id, Vgs :

360m Ω @ 5.6A, 10V

Number of Elements :

1

Avalanche Energy Rating (Eas) :

34 mJ

Mounting Type :

Surface Mount

JEDEC-95 Code :

TO-252AA

ECCN Code :

EAR99

FET Type :

N-Channel

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED