IPD80R2K8CEBTMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

2.8 Ω @ 1.1A, 10V

Published :

2008

Avalanche Energy Rating (Eas) :

90 mJ

Max Dual Supply Voltage :

800V

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

290pF @ 100V

Turn-Off Delay Time :

72 ns

Number of Terminations :

2

Mount :

Surface Mount

Number of Channels :

1

Continuous Drain Current (ID) :

1.9A

Power Dissipation-Max :

42W Tc

Series :

CoolMOS™

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Mounting Type :

Surface Mount

Turn On Delay Time :

25 ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

800V

Pulsed Drain Current-Max (IDM) :

6A

FET Type :

N-Channel

Rise Time :

15ns

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

1.9A Tc

Power Dissipation :

42W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Element Configuration :

Single

Vgs(th) (Max) @ Id :

3.9V @ 120μA

Fall Time (Typ) :

18 ns

Transistor Element Material :

SILICON

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Temperature :

-55°C~150°C TJ

Weight :

3.949996g